triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet july 1, 2002 1 36 - 40 ghz power amplifier TGA1073C-SCC key features and performance ? 0.25um phemt technology ? 36-40 ghz frequency range ? 26 dbm nominal pout @ p1db, 38ghz ? 15 db nominal gain ? bias 5-7v @ 240 ma ? chip dimensions 2.4 mm x 1.45 mm primary applications ? point-to-point radio ? point-to-multipoint radio the triquint TGA1073C-SCC is a two stage pa mmic design using triquints proven 0.25 m m power phemt process to support a variety of millimeter wave applications including point-to-point digital radio and point-to-multipoint systems. the two-stage design consists of two 400 m m input devices driving four 400 m m output devices. the tga1073c provides 24 dbm of output power at 1db gain compression and 26 dbm saturated output power across the 36-40 ghz with a typical small signal gain of 15 db. the tga1073c requires a minimum of off-chip components. each device is 100% dc and rf tested on-wafer to ensure performance compliance. the device is available in chip form. -25 -20 -15 -10 -5 0 5 10 15 20 33 34 35 36 37 38 39 40 41 42 43 tga1073c typical rf performance (fixtured) gain and return loss (db) frequency (ghz) s21 s11 s22 tga1073c typical rf performance (fixtured) output power @ p1db (dbm) frequency (ghz) 3 6 9 12 15 18 21 24 27 30 33 36 37 38 39 40 41 42 30 32 34 36 38 40 42 44 46 48 50 vd = +5v, +6v, +7v p1db imr3 @ vd = +6v imr3 @ scl=p1db-10db (dbc) paramete r uni t +5v su pp l y +6v su pp l y +7v su pp l y small si g nal gain db 15 gain flatness dbpp 1 output p1d b dbm 2 4 25 2 6 saturated output power dbm 2 6 2 7 2 8 saturated pae % 2 3 22 2 0 output otoi dbm 3 4 imr3 @ scl = p1db - 10db dbc 3 4 input return loss db -10 output return loss db -8 reverse isolation db -35 quiescent current m a 225 24 0 26 0 typical performance, 36-40 ghz
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet july 1, 2002 2 table i maximum ratings 6/ symbol parameter value notes v + positive supply voltage 8 v 5/ i + positive supply current 480 ma 1/, 5 / i - negative gate current 28.16 ma p in input continuous wave power 21.2 dbm 5/ p d power dissipation 2.16 w 3/, 5 / t ch operating channel temperature 150 0 c 2/, 3/, 4 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ total current for all stages. 2/ these ratings apply to each individual fet 3/ when operated at this bias condition with a base plate temperature of 70 0 c, the median life is reduced from 2.1 e+7 to 1.9e+6 hours. 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 6/ these ratings represent the maximum operable values for this device. TGA1073C-SCC table ii dc specifications (100%) (t a = 25 c + 5 c) notes symbol limits units min max i dss1 40 188 ma g m1 88 212 ms 1/ |v p1 |0.5 1.5 v 1/ |v p2 |0.5 1.5 v 1/ |v p3-6 |0.5 1.5 v 1/ |v bvgd1,2 |11 30 v 1/ |v bvgs1 |11 30 v 1/ v p , v bvgd , and v bvgs are negative.
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet july 1, 2002 3 table iii rf specifications (t a = 25 c + 5 c) note test measurement conditions value units 6v @ 240ma min typ max 1/ small-signal gain magnitude 36 C 39 ghz 40 ghz 12 9 15 14 db db power output at 1 db gain compression 37 ghz 38.5 ghz 40 ghz 23 23 21 26 26 25 dbm dbm dbm 1/ input return loss magnitude 36 C 40 ghz -10 db 1/ output return loss magnitude 36 C 40 ghz -8 db 2/ output third order intercept 33 dbm 1/ rf probe data is taken at 1 ghz steps. 2/ minimum output third-order intercept (otoi) is generally 6db minimum above the 1db compression point (p1db). calculations are based on standard two-tone testing with each tone approximately 10db below the nominal p1db. factors that may affect otoi performance include device bias, measurement frequency, operating temperature, output interface and output power level for each tone. TGA1073C-SCC table iv reliability data* bias conditions parameter v d (v) i d (ma) p diss (w) t ch ( o c) r q jc ( c/w) t m (hrs) r q jc thermal resistance (channel to backside of carrier plate) 6 240 1.44 116.7 32.43 2.1e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. * this information is a result of a thermal model analysis.
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet july 1, 2002 4 mechanical characteristics TGA1073C-SCC gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet july 1, 2002 5 chip assembly and bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. 1 m f cap on supply line 100pf 0.01 m f 100pf 100pf v g v d rf in rf out 0.01 m f 100pf 1 m f cap on supply line TGA1073C-SCC
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet july 1, 2002 6 TGA1073C-SCC assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 ? c.
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